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600 v, 37 a, igbt with fast recovery diode MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 1 jan.23, 2 01 5 features ? low saturation voltage ? high speed switching ? with integrated low vf fast recovery diode ? rohs compliant ? v ce ------------------------------------------------------ 600 v ? i c ------------------------------------------- 37 a ( t c = 100 c ) ? v ce(sat) ----------------------------------------------- 1. 7 v typ. ? t f --------------------------------------------------- 200 ns typ. ? v f ---------------------------------------------------- 1.2 v typ. applications ? microwave oven ? ih cooker ? inverter circuit package to 3p - 3l not to scale equivalent circuit absolute maximum ratings ? unless otherwise specified, t a = 25 c parameter symbol test conditions rating unit collector to emitter voltage v ce 600 v gate to emitter voltage v ge 30 v continuous collector current i c t c = 25 c 50 a t c = 100 c 37 a pulsed collector current i c(pulse) pw 1m s duty cycle 1 % 100 a diode continuous forward current i f t c = 25 c 30 a diode pulsed forward current i f( pulse) pw 1m s duty cycle 1 % 60 a maximum collector to emitter dv/dt dv/dt t c 1 25 c refer to figure 1 5 v/ns power dissipation p d t c = 25 c 150 w operating junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c (1) (2) (3) g c e (4) c c (2)(4) e (3) g (1) downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 2 jan.23, 2 01 5 preliminary thermal characteristics ? unless otherwise specified, t a = 25 c parameter symbol test conditions m in . t yp . m ax . unit thermal resistance of igbt ( junction to case) r jc (igbt) ? ? 0.833 c/w thermal resistance of diode ( junction to case) r j c ( di ) ? ? 1.67 c/w electrical characteristics ? unless otherwise specified, t a = 25 c parameter symbol test conditions m in . t yp . m ax . unit collector to emitter breakdown voltage v (br) ce s i c = 100 a, v ge = 0 v 600 ? ? v collector to emitter leakage current i ce s v ce = 600 v, v ge = 0 v ? ? 100 a gate to emitter leakage current i ges v ge = 30 v ? ? 5 00 na gate threshold voltage v ge( th ) v ce = 10 v , i c = 1 ma 3 ? 6 v collector to emitter saturation voltage v ce ( sat ) v ge = 15 v , i c = 50 a ? 1. 7 2. 3 v input capacitance c ies v ce = 20 v v ge = 0 v f = 1.0 mhz ? 2500 ? pf output capacitance c oes ? 150 ? reverse transfer capacitance c res ? 80 ? total gate charge q g v ce = 300 v i c = 50 a v ge = 15 v ? 65 ? nc gate to emitter charge q ge ? 20 ? gate to collector charge q gc ? 20 ? turn-on delay time t d(on) t c = 25 c refer to figure 1 ? 75 ? ns rise time t r ? 100 ? turn-off delay time t d(off) ? 300 ? fall time t f ? 200 ? turn-on delay time t d(on) t c = 125 c refer to figure 1 ? 75 ? ns rise time t r ? 100 ? turn-off delay time t d(off) ? 300 ? fall time t f ? 350 ? emitter to collector diode forward voltage v f i f = 30 a 1.2 1.6 v emitter to collector diode reverse recovery time t rr i f = 30 a di/dt = 100 a/ s ? 300 ? ns downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 3 jan.23, 2 01 5 preliminary test circuits and waveforms 15v r g i c l v ce v ge dut (diode) dut (igbt) (a) test circuit v ge v ce i c 10% 90% 90% 10% t d(on) t r t d(off) t f dv/dt 90% 10% tt t (b) waveform figure 1 test circuits and waveforms of dv/dt and switching time test conditions v ce = 300 v i c = 50 a v ge = 15 v r g = 39 l= 100 h downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 4 jan.23, 2 01 5 preliminary characteristic curves figure 1 . reverse bias safe operating area figure 2 . safe operating area figure 3 . power dissipation vs. case temperature figure 4 . collector current vs. case temperature figure 5 . output characteristics (t c = 25 c ) figure 6 . output characteristics (t c = 1 25 c ) 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector-emitter voltage, v ce (v) igbt v ge = 15 v rg = 39 single pulse t c = 125 c 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector-emitter voltage, v ce (v) 100 s 10 s igbt v ge = 15 v single pulse t c = 25 c 0 50 100 150 200 25 50 75 100 125 150 power dissipation, p d (w) case temperature, t c ( c) v ge = 15 v t j < 150 c 0 10 20 30 40 50 60 70 25 50 75 100 125 150 collector current, i c (a) case temperature, t c ( c) v ge = 15 v t j < 150 c 0 20 40 60 80 100 0 1 2 3 4 5 collector current, i c (a) collector-emitter voltage, v ce (v) t c = 25 c v ge = 15 v v ge = 10 v v ge = 8 v v ge = 7 v v ge = 20 v 0 20 40 60 80 100 0 1 2 3 4 5 collector current, i c (a) collector-emitter voltage, v ce (v) t c = 125 c v ge = 10 v v ge = 8 v v ge = 7 v v ge = 15 v v ge = 20 v downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 5 jan.23, 2 01 5 preliminary figure 7 . transfer characteristics figure 8 . saturation voltage vs. junction temperature figure 9 . collector-emitter voltage vs. gate-emitter voltage figure 10 . collector-emitter voltage vs. gate-emitter voltage figure 11 . capacitance characteristics figure 12 . gate charge characteristics 0 20 40 60 80 100 0 5 10 15 collector current. i c (a) gate-emitter voltage, v ge (v) v ce = 5 v t c = ? 55 c t c = 25 c t c = 125 c 0 1 2 3 4 - 50 0 50 100 150 collector-emitter saturation, v ce (sat) (v) junction temperature, t j ( c) i c = 100 a v ge = 15 v i c = 50 a i c = 30 a 0 1 2 3 4 5 1 10 100 collector-emitter voltage, v ce (v) gate-emitter voltage, v ge (v) i c = 100 a t c = 25 c i c = 50 a i c = 30 a 0 1 2 3 4 5 1 10 100 collector-emitter voltage, v ce (v) gate-emitter voltage, v ge (v) i c = 100 a i c = 50 a i c = 30 a t c = 125 c 1 10 100 1000 10000 0 10 20 30 40 50 capacitance (pf) collector-emitter voltage, v ce (v) coes cies cres f = 1 mhz v ge = 0 v 0 10 20 30 40 0 100 200 300 400 0 20 40 60 80 gate-emitter voltage, v ge (v) collector-emitter voltage, v ce (v) gate charge, q g (nc) v ge v ce t c = 25 c i c = 50 a downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 6 jan.23, 2 01 5 preliminary figure 13 . switching time vs. gate resistor figure 14 . switching time vs. gate resistor figure 15 . switching time vs. collector current figure 16 . switching time vs. collector current figure 17 . diode forward characteristics 10 100 1000 1 10 100 switching time (ns) gate resistor, r g ( ) t f t d(off) t d(on ) t r inductive load i c = 50 a, v ce = 300 v, v ge = 15 v, t c = 25 c 10 100 1000 1 10 100 switching time (ns) gate resistor, r g () t f t d(off) t d(on ) t r inductive load i c = 50 a, v ce = 300 v, v ge = 15 v, t c = 125 c 10 100 1000 1 10 100 switching time (ns) collector current, i c (a) inductive load v ce = 300v, v ge = 15 v r g = 39 , t c = 25 c t d(off) t d(on) t r t f 10 100 1000 1 10 100 switching time (ns) collector current, i c (a) t d(off) t d(on) t r t f inductive load v ce = 300v, v ge = 15 v r g = 39 , t c = 125 c 0 20 40 60 80 100 0 1 2 3 forward current, i f (a) forward voltage, v f (v) t c = 125 c t c = 25 c downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 7 jan.23, 2 01 5 preliminary figure 18 . transient thermal resistance 0.001 0.01 0.1 1 10 thermal resistance ( c/w) pulse width (s) t c = 25 c single pulse v ce < 5 v t c = 25 c single pulse v ce < 5 v diode igbt 1 10 100 1m 10m 100m 1 10 100 downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 8 jan.23, 2 01 5 preliminary package outline to 3p - 3l notes: 1) dimension is in millimeters. 2) pin treatment pb-free. device composition compliant with the rohs directive. marking diagram (1) MGD623N (2) (3) part number ym dd lot number y is the last digit of the year (0 to 9) m is the month (1 to 9, o, n or d) dd is the date (two digit of 01 to 31) downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 9 jan.23, 2 01 5 preliminary operating precautions in the case that you use sanken products or design your products by us ing sanken products, the reliability largely depends on the degree of derating to be made to the rated values. derating ma y be interpreted as a case that an operation range is set by derating the load from each rated value or surge voltage or noise is considered for derating in order to assure or improve the reliability. in general, derating factors include electric stress es such as electric voltage, electric current, electric power etc., environmental stresses such as ambient temperature, humidity etc. and thermal stress caused due to self-heating of semiconductor products. for these stresses, instantaneo us values, maximum values and minimum values must be taken into consideration. in add ition, it should be noted that since power devices or ics including power devices have large self-heating value, the degree of derating of junction tem perature affects the reliability significantly. because reliability can be affected adversely by improper storage environmen ts and handling methods, please observe the following cautions. cautions for storage ? ensure that storage conditions comply with the standard temperature (5 to 3 5c) and the standard relative humidity (around 40 to 75%) ; avoid storage locations that experience extreme changes in temperature or humidity. ? avoid locations where dust or harmful gases are present and avoid direct sunligh t. ? reinspect for rust on leads and solderability of the products that have bee n stored for a long time. cautions for testing and handling when tests are carried out during inspection testing and other standard test periods, protect the products from power surges from the testing device, shorts between the product pins, and w rong connections. ensure all test parameters are within the ratings specified by sanken for the products. remarks about using thermal silicone grease ? when thermal silicone grease is used, it shall be applied evenly and thinly. if more silicone grease than required is applied, it may produce excess stress. ? the thermal silicone grease that ha s been stored for a long period of time may cause cracks of th e greases, and it cause low radiation performance. in addition, the old grease may cause cr acks in the resin mold when screwing the products to a heatsink. ? fully consider preventing foreign materials from entering into the thermal silicone grease. when foreign material is immixed, radiation performance may be degraded or an insulation failu re may occur due to a damaged insulating plate. ? the thermal silicone greases that are recommended for the resin molded semicon ductor should be used. our recommended thermal silicone grease is the following, and equivalent of these. type suppliers g746 shin-etsu chemical co., ltd. yg6260 momentive performance materials japan llc sc102 dow corning toray co., ltd. cautions for mounting to a heatsink ? when the flatness around the screw hole is insufficient, such as whe n mounting the products to a heatsink that has an extruded (burred) screw hole, the products can be damaged, even wit h a lower than recommended screw torque. for mounting the products, the mounting surface flatness should be 0 .05mm or less. ? please select suitable screws for the product shape. do not use a flat-head m achine screw because of the stress to the products . self-tapping screws are not recommended. when using self-tapping scre ws, the screw may enter the hole diagonally, not vertically, depending on the conditions of hole befor e threading or the work situation. that may stress the products and may cause failures. ? recommended screw torque : package recommended screw torque to - 220 , to-220f 0.490 to 0.686 n ? m (5 to 7 kgf ? cm) to - 3p , to -3pf , to - 247 0.686 to 0.882 n ? m (7 to 9 kgf ? cm) sla 0.588 to 0.784 n ? m (6 to 8 kgf ? cm) downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 10 jan.23, 2 01 5 preliminary ? for tightening screws, if a tightening tool (such as a driver) hits the products, the package may crack, and internal stress fractures may occur, which shorten the lifetime of the electrical element s and can cause catastrophic failure . tightening with an air driver makes a substantial impact. in addition, a screw torque higher than the set torque can be applied and the package may be damaged. therefore, an electric driver is r ecommended. when the package is tightened at two or more places, first pre-tighten w it h a lower torque at all places, then tighten with the specified torque . when using a power driver, torque control is mandatory. ? please pay special attention about the slack of the press mold. in case that the hole d iameter of the heatsink is less than 4 mm, it may cause the resin crack at tightening. soldering ? when soldering the products, please be sure to minimize the working time, within the following limits: ? 260 5 c 10 1 s (flow, 2 times) ? 380 10 c 3.5 0.5 s (soldering iron, 1 time) ? soldering should be at a distance of at least 1.5 mm from the body of the p roducts. electrostatic discharge ? when handling the products, the operator must be grounded. grounded wr ist straps worn should have at least 1m of resistance from the operator to ground to prevent shock hazard, and it should be placed near the operator. ? workbenches where the products are handled should be grounded and b e provided with conductive table and floor mats. ? when using measuring equipment such as a curve tracer, the equipment shou ld be grounded. ? when soldering the products, the head of soldering irons or the solder bath must be grounded in order to prevent leak voltages generated by them from being applied to the products. ? the products should always be stored and transported in sanken shipp ing containers or conductive containers, or be wrapped in aluminum foil. downloaded from: http:///
MGD623N MGD623N- ds rev.1.0 sanken electric co.,ltd. 11 jan.23, 2 01 5 preliminary important notes ? the contents in this document are subject to changes, for improvement a nd other purposes, without notice. make sure that this is the latest revision of the document before use. ? application examples, operation examples and recommend ed examples described in this document are quoted for the sole purpose of reference for the use of the products herein and sa nken can assume no responsibility for any infringement of industrial property rights, intellectual property rights, life, body, property or any other rights of sanken or any third party which may result from its use. ? unless otherwise agreed in writing by sanken, sanken makes no warran ties of any kind, whether express or implied, as to the products, including product merchantability, and fitness for a particular purpose and special environment, and the information, including its accuracy, usefulness , and reliability, included in this document. ? although sanken undertakes to enhance the quality and reliability of its pr oducts, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. users of sank en products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or mal function. ? sanken products listed in this document are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunicatio n equipment, measuring equipment, etc.). when considering the use of sanken products in the applications where high er reliability is required (transportation equipment and its control systems, traffic signal control systems or equ ipment, fire/crime alarm systems, various safety devices, etc.), and whenever long life expectancy is required even in general purpose electronic equipment or apparatus, please contact your nearest sanken sales representative to discuss, prior to the use of the products herein. the use of sanken products without the written consent of sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems , life support systems, etc.) is strictly prohibited. ? when using the products specified herein by either (i) combining other products or materials therewith or (ii) physically, chemically or otherwise processing or treating the produ cts, please duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. ? anti radioactive ray design is not considered for the products listed herein. ? sanken assumes no responsibility for any troubles, such as dropp ing products caused during transportation out of sankens distribution network. ? the contents in this document must not be transcribed or copied without sanken s written consent. downloaded from: http:///

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